Ch-technology RM900DB-90S Manual do Utilizador descarregar pdf (Página 5)

MITSUBISHI ELECTRIC CORPORATION

HIGH VOLTAGE DIODE MODULE

HVM-2018

(HV-SETSU)

PAGE

4 / 11

11. Test Circuit & Definition of Switching Characteristics

A

K

DUT: diode

Rg

L

LOAD

C

S

= 200 uF

L

S2

= 150 nH

L

S1

C = 2 mF V

CC

Fig. 1 – Switching test circuit

Diode part: reverse recovery

0

0

if dt

0

t6

Qrr

= –

∫

I

F

di/dt

Irr

dt

di

10%V

R

10%I

F

t5

50%Irr

90%Irr

trr

t6

V

R

t6

t5

if•vr dt

Erec

= –

∫

0

Fig. 2 – Definitions of reverse recovery charge & energy

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