
Document Number: 94377 For technical questions, contact: ind-modules@vishay.com
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Revision: 30-Apr-08 7
ST333SP Series
Inverter Grade Thyristors
(Stud Version), 330 A
Vishay High Power Products
Fig. 13 - Frequency Characteristics
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
200
Pulse Ba se w id t h ( µs)
Pea k On-sta te Current (A)
2000
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
ST3 3 3 S Se r i e s
Tr a p e z o i d a l p u l se
T = 5 0 ° C
di/dt = 100A/µs
C
tp
1E4
500
3000
1E1 1E2 1E3 1E4
50 Hz
400
100
1000
1500
200
Pu lse Ba se w id t h ( µs)
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
D
DRM
2000
ST3 3 3 S Se r i e s
Trapezoidal pulse
T = 7 5 ° C
di/dt = 100A/µs
C
tp
500
1E1
2500
3000
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Ba sew id t h ( µs)
20 jo ules p er p ulse
2
1
Peak On-state Current (A)
0.5
10
5
3
0.3
ST33 3 S Se r i e s
Sinusoidal pulse
tp
1E4
0.2
1E1 1E2 1E3 1E4
Pulse Ba se w id t h ( µs)
20 joule s p er p u lse
2
1
0.5
10
5
ST3 3 3 S Se ri e s
Rectangular pulse
di/dt = 50A/µs
tp
1E1
3
0.4
0.3
0.2
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj = - 4 0 ° C
(1)
(2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
De vic e : ST333S Series
(4)
Fr e q u e n c y Li m it e d b y PG (A V )
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