Ch-technology CM1200DB-34N Manual do Utilizador descarregar pdf (Página 3)

CM1200DB-34N

Dual IGBTMOD™ HVIGBT Module

1200 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

01/11 Rev. 0

Absolute Maximum Ratings, T

= 25 °C unless otherwise specied

Ratings Symbol CM1200DB-34N Units

Junction Temperature T

-40 to 150 °C

Storage Temperature T

stg

-40 to 125 °C

Operating Temperature T

opr

-40 to 125 °C

Collector-Emitter Voltage (V

= 0V) V

CES

1700 Volts

Gate-Emitter Voltage (V

= 0V) V

GES

±20 Volts

Collector Current (DC, T

= 80°C) I

1200 Amperes

Peak Collector Current (Pulse) I

2400 Amperes

Emitter Current (T

= 25°C)*

1200 Amperes

Emitter Surge Current (Pulse)*

2400 Amperes

Maximum Power Dissipation (T

= 25°C, IGBT Part)*

6900 Watts

Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb

Module Weight (Typical) – 1.3 kg

Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.) V

iso

4000 Volts

Maximum Short Circuit Pulse Width t

psc

10 µs

= 1200V, V

CES

≤ 1700V, V

= 15V, T

= 125°C)

*1 Pulse width and repetition rate should be such that device junction temperature (T

) does not exceed T

opr(max)

rating (125°C).

*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

*3 Junction temperature (T

) should not exceed T

j(max)

rating (150°C).

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