Ch-technology CM1200DB-34N Manual do Utilizador descarregar pdf (Página 4)

CM1200DB-34N

Dual IGBTMOD™ HVIGBT Module

1200 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

01/11 Rev. 0

Static Electrical Characteristics, T

= 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

CES

= V

CES

, V

= 0V – – 4 mA

Gate-Emitter Threshold Voltage V

GE(th)

= 120mA, V

= 10V 6.0 7.0 8.0 Volts

Gate Leakage Current I

GES

= V

GES

, V

= 0V – – 0.5 µA

Collector-Emitter Saturation Voltage V

CE(sat)

= 1200A, V

= 15V, T

= 25°C*

– 2.15 2.80 Volts

= 1200A, V

= 15V, T

= 125°C*

– 2.40 – Volts

Input Capacitance C

ies

– 176 – nF

Output Capacitance C

oes

= 10V, f = 100kHz, V

= 0V – 9.6 – nF

Reverse Transfer Capacitance C

res

– 2.8 – nF

Total Gate Charge Q

= 850V, I

= 1200A, V

= 15V – 6.8 – µC

Emitter-Collector Voltage V

= 1200A, V

= 0V, T

= 25°C*

– 2.60 3.30 Volts

= 1200A, V

= 0V, T

= 125°C*

– 2.30 – Volts

Turn-On Delay Time t

d(on)

= 850V, I

= 1200A, – 1.00 – µs

Turn-On Rise Time t

= ±15V, R

G(on)

= 1.3Ω, – 0.40 – µs

Turn-On Switching Energy E

= 125°C, L

= 150nH, Inductive Load – 380 – mJ/P

Turn-Off Delay Time t

d(off)

= 850V, I

= 1200A, – 1.20 – µs

Turn-Off Fall Time t

= ±15V, R

G(off)

= 3.3Ω, – 0.30 – µs

Turn-Off Switching Energy E

off

= 125°C, L

= 150nH, Inductive Load – 360 – mJ/P

Reverse Recovery Time t

= 850V, I

= 1200A, – 1.00 – µs

Reverse Recovery Current I

= ±15V, R

G(on)

= 1.3Ω, – 560 – Amperes

Reverse Recovery Charge Q

= 125°C, L

= 150nH, – 300 – µC

Reverse Recovery Energy E

rec

Inductive Load – 220 – mJ/P

*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.

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